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introducin g sic schottk y diode gy q fn packa g e 2012
agenda ? introduction to cree power ? schottky diode qfn package ? benefits in led and li g htin g a pp lications ggpp ? reference design test data copyright ? 2012, cree, inc. pg. 2
cree businesses cree cree sic/gan sic/gan materials materials copyright ? 2011, cree, inc. pg. 3
power and rf components world?s leading manufacturer of silicon a leading supplier of carbide-based diodes for a leading supplier of sic and gan power control and management. rf devices for wireless communications secure military broadband amplifiers secure military communications solar inverters cellular infrastructure industrial motor drivers power factor correction copyright ? 2012, cree, inc. pg. 4
revolutionizing the power semiconductors 2002 first 600v commercial sic schottky 2007 cree converts to 100mm wafers for 2009 fraunhoefer inst. shows world s best 2010 first 1700v schottky diodes 2011 first sic mosfet 80m ? , 1200v diode 2006 first 1200v power solar inverter efficiency, >98% with cree sic devices cree demonstrates first 150mm sic wafer copyright ? 2011, cree, inc. pg. 5 sic schottky diode devices sic wafer
cree has shipped 200 gva of sic diodes 120,000 mega-va of cree sic jbs diodes ? sic diodes have significant penetration in applications where efficiency is essential 60 000 80,000 100,000 ? servers fro data centers ? telecom power supplies ? solar inverters sic mosfet bl 20,000 40,000 60 , 000 ? sic mosfet s ena bl e even greater efficiency improvements 0 2005 2006 2007 2008 2009 2010 2011 copyright ? 2012, cree, inc.
cree sic diodes: proven quality and reliability cree sic diode field failure rate data since jan. 2004 product device hours fit (fails/billion hrs) csdxxx60 205,000,000,000 0.16 C3DXXX60 81,000,000,000 0.09 C3DXXX60 81,000,000,000 0.09 c2dxx120 46,000,000,000 1.35 total 332,000,000,000 0.31 more than 10x lower than typical silicon typical fit rate for si pin diodes is ~ 5 300 billion device hours in the field with an industry- leading fit rate of only 0.31 leading fit rate of only 0.31 copyright ? 2012, cree, inc. pg. 7
new ?qfn? package - c3d1p7060q ? key electrical parameters ? forward rated current: 1.7a @ t c < 150 ? c ? reverse blocking voltage: 600v ? forward voltage: 1.7v @ 100 ? c ? ? package ? smallest sic package in the market ? smallest sic package in the market ? 3.3 x 3.3 x 1mm qfn surface mount ? benefits ? higher driver efficiency = higher lm/w ? lower thermals for diode surrounding components ? lower thermals for diode , surrounding components ? smaller footprint copyright ? 2012, cree, inc. pg. 8
why cree schottky diodes? cree c3d1p7060q in light bulb applications ? cree?s new c3d1p7060q well suited for new non- isolated lighting applications isolated lighting applications ? industry's smallest sic package well suited for space constrained application such as lighting ? improved switching behavior reduces thermals and stress on mosfet copyright ? 2011, cree, inc. pg. 9
isolated vs non-isolated led lighting schottky diode schottky diode isolated single stage flyback non-isolated low-side buck ? transformer for isolation ? single stage flyback ? inductor with no isolation ? low side buck ? typical eff. 80% ? freewheeling schottky output diode ? diode blocking dc voltage ? typical eff. 85% ? freewheeling diode during mosfet off time copyright ? 2012, cree, inc. pg. 10 diode blocking dc voltage <200v, si schottky diodes ok ? diode blocking dc voltage >400v, si schottky limit to 200v
why use a sic schottky diode? reverse current during diode off and mos on mosfet on ? simplified circuit operation mosfet q is turned on current ramps up through inductor and led string mosfet q is turned on , current ramps up through inductor and led string mosfet q is turned off and the freewheeling diode d conducts the current the current through the inductor and led string copyright ? 2012, cree, inc. pg. 11 any reverse recover current from diode will flow into the mosfet.
7w non-isolated led reference design 55mmx28mmx13mm 55mmx28mmx13mm specification items min t ypical max input ac voltage 180vac 220vac 264vac output voltage tolerance 20vdc 26vdc 28vdc output current per string 250ma 270ma 285ma output current tolerance +-5% efficiency with cree sic 82% efficiency with cree sic 82% power factor 0.8 0.85 controller lm3445 copyright ? 2012, cree, inc. pg. 12 dimming phase cutting dimmable led cree xpe 10pcs [100ma to 400ma]
7w cree reference design - schematic ? driver spec ? input: 240vac ? ? ? switching freq: 125khz ? driver ic: ti/national lm3445 copyright ? 2012, cree, inc. pg. 13
7w cree reference design - test data efficiency comparison 4% ffi i i ? ~ 4% e ffi c i ency i mprovement copyright ? 2012, cree, inc. pg. 14
7w cree reference design - test data efficiency comparison at different load conditions copyright ? 2012, cree, inc. pg. 15
7w cree reference design - test data (cont.) ? mosfet and diode temperature comparison ? 12 c cooler on diode ? 17 c coo l e r o n m os fet c coo e o os copyright ? 2012, cree, inc. pg. 16
7w cree reference design - test data (cont.) ? mosfet comparison brown: v ds mosfet x: 200v/div; y: 5us/div blue: i ds mosfet x: 500ma/div; y: 5us/div cree i ds max 698ma on semi i ds max 1.32a ? lower mosfet stress since less reverse recovery current from diode copyright ? 2012, cree, inc. pg. 17
test data summary ? c3d1p7060q schottky diode enables highest efficiency solutions 1. ccm with low-side buck converter 2. high output current led>300m a ? c3d1p7060 q schottk y diode brin g s s y stem benefits q ygy 1. small 3.3 x 3.3 mm footprint saves space 2. efficiency improves 4-5% 3. t hermal reduction 15-20c can shrink heatsin k , p rolon g life of ca p s ,p g p 4. reduce mosfet current rating (lower cost part) copyright ? 2012, cree, inc. pg. 18
conclusion ? c3d1p7060q schottky diode enables higher lm/w 1. best fit topology ? ccm with low-side buck converter ?hi g h output current led>300m a ? s ystem benefits 1. space savings/higher density ? small 3.3 x 3.3 mm footprint 2. efficiency improves 2-5% 3. improved reliability ? sic more reliable than si ? thermal reduction 15-20c can shrink heatsink, prolong life of caps rd mosfet t ti (l t t) ? r e d uce mosfet curren t ra ti n g (l ower cos t par t) copyright ? 2012, cree, inc. pg. 19

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